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| inchange semiconductor product specification silicon npn power transistors 2SC4233 description with to-220c package high breakdown voltage switching power transistor pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 6 a i b base current 1 a i bm base current-peak 2 a p c collector dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 2.08 /w
inchange semiconductor product specification 2 silicon npn power transistors 2SC4233 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; r be = 800 v v ce(sat) collector-emitter saturation voltage i c =1.5a; i b =0.3a 1.0 v v be(sat) base-emitter saturation voltage i c =1.5a; i b =0.3a 1.5 v i cbo collector cut-off current i ceo collector cut-off current at rated voltage 100 a i ebo emitter cut-off current at rated voltage 100 a h fe-1 dc current gain i c =1.5a ; v ce =5v 8 h fe-2 dc current gain i c =1ma ; v ce =5v 7 f t transition frequency i c =0.3a ; v ce =10v 8 mhz switching times t on turn-on time 0.5 s t stg storage time 3.5 s t f fall time v bb2 =4v; i c =1.5a i b1 =0.3a;i b2 =0.6a r l =170 0.3 s inchange semiconductor product specification 3 silicon npn power transistors 2SC4233 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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